- Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography - art. no. 011034
[作者:Kwon, G; Ko, K; Lee, H; Lim, W; Yeom, GY; Lee, S; Ahn, J,期刊:Journal Of Vacuum Science & Technology B, 页码:11034-11034 , 文章类型: Article,,卷期:2011年29-1]
- We describe methods to fabricate extreme ultraviolet lithography (EUVL) absorber mask patterns by atomic force microscope (AFM) lithography and inductively coupled plasma (ICP) etching. AFM lithography, based on anodizat...
- Path to achieve sub-10-nm half-pitch using electron beam lithography - art. no. 011035
[作者:Tavakkoli, A; Piramanayagam, SN; Ranjbar, M; Sbiaa, R; Chong, TC,期刊:Journal Of Vacuum Science & Technology B, 页码:11035-11035 , 文章类型: Article,,卷期:2011年29-1]
- Achieving dense patterns with good resolution is a key step for several applications in micro-and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have ...
- Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors - art. no. 01AB07
[作者:Amat, E; Martin-Martinez, J; Gonzalez, MB; Rodriguez, R; Nafria, M; Aymerich, X; Verheyen, P; Simoen, E,期刊:Journal Of Vacuum Science & Technology B, 页码:AB107-AB107 , 文章类型: Article,,卷期:2011年29-1]
- The channel hot-carrier (CHC) degradation in metal-oxide semiconductor field-effect transistors based on a high-k dielectric with strained-Si/relaxed Si1-xGex structures has been little studied so far. However, due to th...
- Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress - art. no. 01AB08
[作者:Erlbacher, T; Yanev, V; Rommel, M; Bauer, AJ; Frey, L,期刊:Journal Of Vacuum Science & Technology B, 页码:AB108-AB108 , 文章类型: Article,,卷期:2011年29-1]
- The gate oxide integrity of different thin films (silicon dioxide, silicon nitride, and hafnium oxide) was analyzed by constant voltage stress (CVS) at the nanoscale using conductive atomic force microscopy (cAFM) with t...
- Hot-carrier degradation caused interface state profile-Simulation versus experiment - art. no. 01AB09
[作者:Starkov, I; Tyaginov, S; Enichlmair, H; Cervenka, J; Jungemann, C; Carniello, S; Park, JM; Ceric, H; Grasser, T,期刊:Journal Of Vacuum Science & Technology B, 页码:AB109-AB109 , 文章类型: Article,,卷期:2011年29-1]
- Hot-carrier degradation is associated with the buildup of defects at or near the silicon/silicon dioxide interfaced of a metal-oxide-semiconductor transistor. However, the exact location of the defects, as well as their ...
- Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology - art. no. 01A301
[作者:Luptak, R; Lopes, JMJ; Lenk, S; Hollander, B; Ozben, ED; Tiedemann, AT; Schnee, M; Schubert, J; Habicht, S; Feste, S; Mantl, S; Breuer, U; Besmehn, A; Baumann, PK; Heuken, M,期刊:Journal Of Vacuum Science & Technology B, 页码:A1301-A1301 , 文章类型: Article,,卷期:2011年29-1]
- In this study, the authors present results on the structural, chemical, and electrical characterization of HfO2 thin layers on 300 mm Si wafers. The layers were prepared by atomic layer deposition using a liquid delivery...
- Structural and electrical properties of TixAl1-xOy thin films grown by atomic layer deposition - art. no. 01A302
[作者:Alekhin, AP; Chouprik, AA; Gudkova, SA; Markeev, AM; Lebedinskii, YY; Matveyev, YA; Zenkevich, AV,期刊:Journal Of Vacuum Science & Technology B, 页码:A1302-A1302 , 文章类型: Article,,卷期:2011年29-1]
- Ternary oxide TixAl1-xOy thin films with a wide Ti/Al ratio have been grown by atomic layer deposition technique. As grown titanium aluminate films are shown to be a homogeneous alloy and exhibit the amorphous structure ...
- Design and focused ion beam fabrication of single crystal diamond nanobeam cavities - art. no. 010601
[作者:Babinec, TM; Choy, JT; Smith, KJM; Khan, M; Loncar, M,期刊:Journal Of Vacuum Science & Technology B, 页码:10601-10601 , 文章类型: Article,,卷期:2011年29-1]
- We present the design and fabrication of nanobeam photonic crystal cavities in single crystal diamond for applications in cavity quantum electrodynamics. First, we describe three-dimensional finite-difference time-domain...
- Chemical vapor deposition and characterization of high-k BaHf1-xTixO3 dielectric layers for microelectronic applications - art. no. 01A303
[作者:Abrutis, A; Katkus, T; Stanionyte, S; Kubilius, V; Lupina, G; Wenger, C; Lukosius, M,期刊:Journal Of Vacuum Science & Technology B, 页码:A1303-A1303 , 文章类型: Article,,卷期:2011年29-1]
- Possibilities to grow high-k BaHf1-xTixO3 layers were investigated by pulsed liquid injection metal-organic chemical vapor deposition technique. Ba(thd)(2) (thd=2,2,6,6-tetramethylheptane3,5- dionate), Hf(thd)(4), and Ti...
- Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition - art. no. 01A304
[作者:Popovici, M; Van Elshocht, S; Menou, N; Favia, P; Bender, H; Rosseel, E; Swerts, J; Adelmann, C; Vrancken, C; Moussa, A; Tielens, H; Tomida, K; Pawlak, M; Kaczer, B; Schoofs, G; Vandervorst, W; Wouters, DJ; Kittl, JA,期刊:Journal Of Vacuum Science & Technology B, 页码:A1304-A1304 , 文章类型: Article,,卷期:2011年29-1]
- Strontium titanate (STO) is a dielectric with a cubic perovskite type structure and of increasing interest for microelectronics, especially in the metal-insulator-metal (MIM) capacitors due to its high dielectric constan...
- Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures - art. no. 01AC02
[作者:Martin, D; Grube, M; Weinreich, W; Muller, J; Wilde, L; Erben, E; Weber, WM; Heitmann, J; Schroder, U; Mikolajick, T; Riechert, H,期刊:Journal Of Vacuum Science & Technology B, 页码:AC102-AC102 , 文章类型: Article,,卷期:2011年29-1]
- In order for sub-10 nm thin films of ZrO2 to have a dielectric constant larger than 30 they need to be crystalline. This is done by either depositing the layer at higher temperatures or by a postdeposition annealing step...
- Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 - art. no. 01AC03
[作者:Dudek, P; Lupina, G; Kozlowski, G; Zaumseil, P; Bauer, J; Fursenko, O; Dabrowski, J; Schmidt, R; Lippert, G; Mussig, HJ; Schroeder, T; Schmeisser, D; Zschech, E,期刊:Journal Of Vacuum Science & Technology B, 页码:AC103-AC103 , 文章类型: Article,,卷期:2011年29-1]
- Controlled substitution of Hf4+ by Ti4+ ions in thin BaHfO3 was investigated in view of future dynamic random access memory (DRAM) applications. The 50% substitution of Hf ions reduces the crystallization temperature by ...
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