【文章名】Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 - art. no. 01AC03
个性化文献订阅>期刊> Journal Of Vacuum Science & Technology B
Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 - art. no. 01AC03
[摘要]：Controlled substitution of Hf4+ by Ti4+ ions in thin BaHfO3 was investigated in view of future dynamic random access memory (DRAM) applications. The 50% substitution of Hf ions reduces the crystallization temperature by about 200 degrees C with respect to
