Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors - art. no. 01AB07

[摘要]：The channel hot-carrier (CHC) degradation in metal-oxide semiconductor field-effect transistors based on a high-k dielectric with strained-Si/relaxed Si1-xGex structures has been little studied so far. However, due to the high mobility enhancement observe

[全文传递流程]：

一般上传文献全文的时限在1个工作日内