Chemical vapor deposition and characterization of high-k BaHf1-xTixO3 dielectric layers for microelectronic applications - art. no. 01A303

[摘要]：Possibilities to grow high-k BaHf1-xTixO3 layers were investigated by pulsed liquid injection metal-organic chemical vapor deposition technique. Ba(thd)(2) (thd=2,2,6,6-tetramethylheptane3,5- dionate), Hf(thd)(4), and Ti((OPr)-Pr-i)(2)(thd)(2) were used a

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