- High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers
[作者：Reading, MA; van den Berg, JA; Zalm, PC; Armour, DG; Bailey, P; Noakes, TCQ; Parisini, A; Conard, T; De Gendt, S,期刊：Journal Of Vacuum Science & Technology B, 页码：C1C65-C1C70 , 文章类型： Article，,卷期：2010年28-1]
- Ultrathin high-k layers such as hafnium oxide (HfO2) in combination with a subnanometer SiO2 or Hf silicate have emerged as Si compatible gate dielectric materials. Medium energy ion scattering (MEIS) analysis has been c...
- Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon
[作者：Pepponi, G; Giubertoni, D; Bersani, M; Meirer, F; Ingerle, D; Steinhauser, G; Streli, C; Hoenicke, P; Beckhoff, B,期刊：Journal Of Vacuum Science & Technology B, 页码：C1C59-C1C64 , 文章类型： Article，,卷期：2010年28-1]
- Dopant depth profiling and dose determination are essential for ultrashallow junction technology development. However they pose a challenge to the widely used dynamic secondary ion mass spectroscopy (SIMS) technique that...
- Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants
[作者：Merkulov, A; Peres, P; Choi, S; Horreard, F; Ehrke, HU; Loibl, N; Schuhmacher, M,期刊：Journal Of Vacuum Science & Technology B, 页码：C1C48-C1C53 , 文章类型： Article，,卷期：2010年28-1]
- This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS ...
- Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylate
[作者：Mohammad, MA; Fito, T; Chen, J; Aktary, M; Stepanova, M; Dew, SK,期刊：Journal Of Vacuum Science & Technology B, 页码：L1-L4 , 文章类型： Article，,卷期：2010年28-1]
- The authors report a systematic experimental study of dense nanostructures in polymethylmethacrylate (PMMA) created by low-energy electron beam lithography (EBL) with varying duration and temperature of the resist dissol...
- Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy
[作者：Ehrke, HU; Loibl, N; Moret, MP; Horreard, F; Choi, J; Hombourger, C; Paret, V; Benbalagh, R; Morel, N; Schuhmacher, M,期刊：Journal Of Vacuum Science & Technology B, 页码：C1C54-C1C58 , 文章类型： Article，,卷期：2010年28-1]
- Secondary ion mass spectrometry (SIMS) and low energy electron induced x-ray emission spectroscopy (LEXES) are both well established technologies. SIMS tools are the ultimate reference for depth profiling and direct meas...
- Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques
[作者：Giubertoni, D; Iacob, E; Hoenicke, P; Beckhoff, B; Pepponi, G; Gennaro, S; Bersani, M,期刊：Journal Of Vacuum Science & Technology B, 页码：C1C84-C1C89 , 文章类型： Article，,卷期：2010年28-1]
- Boron ultralow energy (0.2-3 keV) high dose (1x10(15) cm(-2)) implants in single crystalline Si (100) were characterized by secondary ion mass spectrometry using an ultralow energy (0.35-0.5 keV) O-2(+) ion primary beam ...
- Quantitative dopant profiling of p-n junction in InGaAs/AlGaAs light-emitting diode using off-axis electron holography
[作者：Chung, S; Johnson, SR; Ding, D; Zhang, YH; Smith, DJ; McCartney, MR,期刊：Journal Of Vacuum Science & Technology B, 页码：C1D11-C1D14 , 文章类型： Article，,卷期：2010年28-1]
- The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junct...
- Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
[作者：Flachowsky, S; Illgen, R; Herrmann, T; Klix, W; Stenzel, R; Ostermay, I; Naumann, A; Wei, A; Hontschel, J; Horstmann, M,期刊：Journal Of Vacuum Science & Technology B, 页码：C1G12-C1G17 , 文章类型： Article，,卷期：2010年28-1]
- Strained silicon techniques have become an indispensable technology feature, enabling the momentum of semiconductor scaling. Embedded silicon-germanium (eSiGe) is already widely adopted in the industry and delivers outst...
- Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 A degrees heterojunction bipolar transistors
[作者：Mairiaux, E; Desplanque, L; Wallart, X; Zaknoune, M,期刊：Journal Of Vacuum Science & Technology B, 页码：17-20 , 文章类型： Article，,卷期：2010年28-1]
- This article describes a comparative study of Ti/Au, Ti/Pd/Au, Ti/Pt/Au, Mo/Au, Mo/Pt/Au, and Pd/Mo/Pt/Au Ohmic contacts to both n- and p-In0.65Ga0.35Sb. For In0.65Ga0.35Sb:Te doped to 2x10(18) cm(-3), specific contact r...
- Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
[作者：Illgen, R; Flachowsky, S; Herrmann, T; Klix, W; Stenzel, R; Feudel, T; Hontschel, J; Horstmann, M,期刊：Journal Of Vacuum Science & Technology B, 页码：C1I12-C1I16 , 文章类型： Article，,卷期：2010年28-1]
- This article shows the importance of source/drain extension dopant species on the performance of embedded silicon-germanium strained silicon on insulator p-metal oxide semiconductor field effect transistor (MOSFET) devic...
- Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors
[作者：Chu, BH; Lin, HW; Gwo, S; Wang, YL; Pearton, SJ; Johnson, JW; Rajagopal, P; Roberts, JC; Piner, EL; Linthicuni, KJ; Ren, F,期刊：Journal Of Vacuum Science & Technology B, 页码：L5-L8 , 文章类型： Article，,卷期：2010年28-1]
- Real time chloride ion detection using InN gated AlGaN/GaN high electron mobility transistors (HEMTs) was demonstrated. The InN thin film on the gate area of the HEMT provided fixed surface sites for reversible anion coo...
- Electrical characterization of InGaAs ultra-shallow junctions
[作者：Petersen, DH; Hansen, O; Boggild, P; Lin, R; Nielsen, PF; Lin, D; Adelmann, C; Alian, A; Merckling, C; Penaud, J; Brammertz, G; Goossens, J; Vandervorst, W; Clarysse, T,期刊：Journal Of Vacuum Science & Technology B, 页码：C1C41-C1C47 , 文章类型： Article，,卷期：2010年28-1]
- In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements wi...
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