High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers

[摘要]：Ultrathin high-k layers such as hafnium oxide (HfO2) in combination with a subnanometer SiO2 or Hf silicate have emerged as Si compatible gate dielectric materials. Medium energy ion scattering (MEIS) analysis has been carried out on a range of such metal

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