Quantitative dopant profiling of p-n junction in InGaAs/AlGaAs light-emitting diode using off-axis electron holography

[摘要]：The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancie

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