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Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys

  作者 Chen, RY; Dunham, ST  
  选自 期刊  Journal Of Vacuum Science & Technology B;  卷期  2010年28-1;  页码  C1G18-C1G23  
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[摘要]Point-defect-mediated diffusion processes are investigated in strained SiGe alloys using kinetic lattice Monte Carlo (KLMC) simulation technique. The KLMC simulator incorporates an augmented lattice domain and includes defect structures, atomistic hopping

 
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