【文章名】Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
个性化文献订阅>期刊> Journal Of Vacuum Science & Technology B
Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
[摘要]：This article shows the importance of source/drain extension dopant species on the performance of embedded silicon-germanium strained silicon on insulator p-metal oxide semiconductor field effect transistor (MOSFET) devices, in which the activation was don
