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Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy

  作者 Ehrke, HU; Loibl, N; Moret, MP; Horreard, F; Choi, J; Hombourger, C; Paret, V; Benbalagh, R; Morel, N; Schuhmacher, M  
  选自 期刊  Journal Of Vacuum Science & Technology B;  卷期  2010年28-1;  页码  C1C54-C1C58  
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[摘要]Secondary ion mass spectrometry (SIMS) and low energy electron induced x-ray emission spectroscopy (LEXES) are both well established technologies. SIMS tools are the ultimate reference for depth profiling and direct measurement of dopants with highest sen

 
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