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Electrical characterization of InGaAs ultra-shallow junctions

作者	Petersen, DH; Hansen, O; Boggild, P; Lin, R; Nielsen, PF; Lin, D; Adelmann, C; Alian, A; Merckling, C; Penaud, J; Brammertz, G; Goossens, J; Vandervorst, W; Clarysse, T

选自	期刊 Journal Of Vacuum Science & Technology B; 卷期 2010年28-1; 页码 C1C41-C1C47

关联知识点

[摘要]：In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) an
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