Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques

[摘要]：Boron ultralow energy (0.2-3 keV) high dose (1x10(15) cm(-2)) implants in single crystalline Si (100) were characterized by secondary ion mass spectrometry using an ultralow energy (0.35-0.5 keV) O-2(+) ion primary beam and collecting positive secondary i

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