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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共89条记录   Time-resolved studies of a rolled-up semiconductor microtube laser [作者：Strelow, C; Sauer, M; Fehringer, S; Korn, T; Schuller, C; Stemmann, A; Heyn, C; Heitmann, D; Kipp, T,期刊：Applied Physics Letters, 页码：221115-221115 , 文章类型： Article，,卷期：2009年95-22] We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on times and short pulse emi... Control of polarization and dipole moment in low-dimensional semiconductor nanostructures [作者：Li, LH; Mexis, M; Ridha, P; Bozkurt, M; Patriarche, G; Smowton, PM; Blood, P; Koenraad, PM; Fiore, A,期刊：Applied Physics Letters, 页码：221116-221116 , 文章类型： Article，,卷期：2009年95-22] We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, through nanoscale engineering of shape and composition. Rodlike nanostructures, elongated along the growth direction, are obta... Influence of spot size on extreme ultraviolet efficiency of laser-produced Sn plasmas [作者：Harilal, SS; Coons, RW; Hough, P; Hassanein, A,期刊：Applied Physics Letters, 页码：221501-221501 , 文章类型： Article，,卷期：2009年95-22] We have investigated the spot size effects on the extreme ultraviolet conversion efficiency (CE) of CO2 laser-produced Sn plasmas. The estimated CE of the laser to 13.5 nm radiation, within a 2% bandwidth, using a 10.6 m... Intense ultrafast light kick by rotational Raman wake in atmosphere [作者：Wu, J; Cai, H; Lu, PF; Bai, XS; Ding, LE; Zeng, HP,期刊：Applied Physics Letters, 页码：221502-221502 , 文章类型： Article，,卷期：2009年95-22] We report that intense ultrafast light can be particlelike kicked through the rotational Raman wake of the impulsively pre-excited diatomic molecules in atmosphere, manifested by controllable repulsion and attraction of ... Diffuse and doubly split atom occupation in hexagonal LiBH4 [作者：Ikeshoji, T; Tsuchida, E; Ikeda, K; Matsuo, M; Li, HW; Kawazoe, Y; Orimo, S,期刊：Applied Physics Letters, 页码：221901-221901 , 文章类型： Article，,卷期：2009年95-22] A theoretical study has been performed to explain problems in the structural analysis of LiBH4 and its recently discovered superionic conductance. First-principles molecular dynamics simulations for the high temperature ... Dynamics of entrained air bubbles inside a piezodriven inkjet printhead [作者：Lee, SJ; Kwon, DH; Choi, YS,期刊：Applied Physics Letters, 页码：221902-221902 , 文章类型： Article，,卷期：2009年95-22] Entrained air bubbles inside a piezoelectric inkjet printhead cause a malfunction in the droplet formation and deteriorate the reliability of inkjet printing. The dynamic motion of the entrained air bubbles is investigat... Electron spin relaxation by nuclei and holes in single InAs quantum dots [作者：Dou, XM; Chang, XY; Sun, BQ; Xiong, YH; Niu, ZC; Ni, HQ; Jiang, DS,期刊：Applied Physics Letters, 页码：221903-221903 , 文章类型： Article，,卷期：2009年95-22] Electron spin relaxation of charged excitons X+ and X2+ are investigated by time-resolved and polarization-resolved photoluminescence spectroscopy. For X+ configuration, the electron spin relaxation shows a typical decay... X-ray excited luminescence of cuprous iodide single crystals: On the nature of red luminescence [作者：Gao, P; Gu, M; Liu, XL; Liu, B; Huang, SM,期刊：Applied Physics Letters, 页码：221904-221904 , 文章类型： Article，,卷期：2009年95-22] The x-ray excited luminescence spectra of different quality CuI crystals were measured. The prevailing blue luminescence and the unusual red luminescence were found at the same time. The relative intensity of these two l... Surface adsorption and disordering in LiFePO4 based battery cathodes [作者：Kayyar, A; Qian, HJ; Luo, J,期刊：Applied Physics Letters, 页码：221905-221905 , 文章类型： Article，,卷期：2009年95-22] A recent study [Kang and Ceder, Nature (London) 458, 190 (2009)] suggested that a Li4P2O7-like "fast ion-conducting surface phase" could form on the surfaces of LiFePO4 particles, enabling ultrafast discharging of Li-ion... Nonlinear refractive index and three-photon absorption coefficient of poly(9,9-dioctylfluorence) [作者：Jang, JI; Mani, S; Ketterson, JB; Lovera, P; Redmond, G,期刊：Applied Physics Letters, 页码：221906-221906 , 文章类型： Article，,卷期：2009年95-22] We investigate the optical Kerr effect and third harmonic generation (THG) arising from chi((3)) of poly(9,9-dioctylfluorence), which is an emerging organic pi-conjugated polymer from the perspective of diverse optoelect... Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology [作者：Feldman, B; Dunham, ST,期刊：Applied Physics Letters, 页码：222101-222101 , 文章类型： Article，,卷期：2009年95-22] Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu intercon... Characteristics of indium-tin-oxide Schottky contacts to ZnMgO/ZnO heterojunctions with band gap grading [作者：Yoon, JG; Cho, SW; Lee, E; Chung, JS,期刊：Applied Physics Letters, 页码：222102-222102 , 文章类型： Article，,卷期：2009年95-22] We report on electrical characteristics of indium-tin-oxide (ITO) Schottky contacts to transparent n-n isotype heterojunctions composed of a compositionally graded Zn1-xMgxO (g-ZnMgO) and ZnO films fabricated on ITO-coat... Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates [作者：Tongay, S; Schumann, T; Hebard, AF,期刊：Applied Physics Letters, 页码：222103-222103 , 文章类型： Article，,卷期：2009年95-22] We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forwa... Valence band offset and interface stoichiometry at epitaxial Si3N4/Si(111) heterojunctions formed by plasma nitridation [作者：Lee, HM; Kuo, CT; Shiu, HW; Chen, CH; Gwo, S,期刊：Applied Physics Letters, 页码：222104-222104 , 文章类型： Article，,卷期：2009年95-22] Ultrathin beta-Si3N4(0001) epitaxial films formed by N-2-plasma nitridation of Si(111) substrates have been studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset at the beta-Si3N4/Si ... Near band edge Schottky barrier height modulation using high-kappa dielectric dipole tuning mechanism [作者：Coss, BE; Loh, WY; Wallace, RM; Kim, J; Majhi, P; Jammy, R,期刊：Applied Physics Letters, 页码：222105-222105 , 文章类型： Article，,卷期：2009年95-22] Schottky barrier height tuning using high-kappa/SiO2 interfacial dipoles is reported. Schottky barrier heights of 1.0 and 0.2 eV are observed in a TaN/p-Si diode by insertion of thin layers of high-kappa (LaOx,AlOx) and ... Electronic properties of Ge dangling bond centers at Si1-xGex/SiO2 interfaces [作者：Afanas'ev, VV; Houssa, M; Stesmans, A; Souriau, L; Loo, R; Meuris, M,期刊：Applied Physics Letters, 页码：222106-222106 , 文章类型： Article，,卷期：2009年95-22] Comparison between densities of paramagnetic Ge dangling bond defects and shallow acceptor traps at interfaces of the condensation-grown Si1-xGex layers (0.28 < x < 0.93) with thermal SiO2 as a function of Ge fraction, x...