Valence band offset and interface stoichiometry at epitaxial Si3N4/Si(111) heterojunctions formed by plasma nitridation

[摘要]：Ultrathin beta-Si3N4(0001) epitaxial films formed by N-2-plasma nitridation of Si(111) substrates have been studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset at the beta-Si3N4/Si interface was determined by valence

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