Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates

[摘要]：We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are w

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