Near band edge Schottky barrier height modulation using high-kappa dielectric dipole tuning mechanism

[摘要]：Schottky barrier height tuning using high-kappa/SiO2 interfacial dipoles is reported. Schottky barrier heights of 1.0 and 0.2 eV are observed in a TaN/p-Si diode by insertion of thin layers of high-kappa (LaOx,AlOx) and SiO2 at the metal-semiconductor int

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