- Microstructure and magnetization reversal of L1(0)-FePt/[Co/Pt](N) exchange coupled composite films
[作者:Guo, HH; Liao, JL; Ma, B; Zhang, ZZ; Jin, QY; Wang, H; Wang, JP,期刊:Applied Physics Letters, 页码:142406-142406 , 文章类型: Article,,卷期:2012年100-14]
- Two series of perpendicular exchange coupled composites (ECC) films are prepared by dc magnetron sputtering, FePt(5)/[Co(0.2)/Pt(0.3)](N) (ECC-I-N) and FePt(5)/[Co(0.2)/Pt(0.6)](N) (ECC-II-N), respectively. Structure ana...
- Phase sensitive monitoring of electron bunch form and arrival time in superconducting linear accelerators
[作者:Kaya, C; Schneider, C; Al-Shemmary, A; Seidel, W; Kuntzsch, M; Bhattacharyya, J; Mittendorff, M; Evtushenko, P; Winnerl, S; Staats, G; Helm, M; Stojanovic, N; Michel, P; Gensch, M,期刊:Applied Physics Letters, 页码:141103-141103 , 文章类型: Article,,卷期:2012年100-14]
- In this Letter, we present a simple approach for monitoring electron bunch form and arrival time combining electro-optic sampling and phase and frequency sensitive signal detection. The sensitivity of the technique has t...
- Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
[作者:Kordos, P; Kudela, R; Stoklas, R; Cico, K; Mikulics, M; Gregusova, D; Novak, J,期刊:Applied Physics Letters, 页码:142113-142113 , 文章类型: Article,,卷期:2012年100-14]
- Application of GaAs-based metal-oxide-semiconductor (MOS) structures, as a "high carrier mobility" alternative to conventional Si MOS transistors, is still hindered due to difficulties in their preparation with low surfa...
- Surface area enhancement of microcantilevers by femto-second laser irradiation
[作者:Kumar, A; Rajauria, S; Huo, H; Ozsun, O; Rykaczewski, K; Kumar, J; Ekinci, KL,期刊:Applied Physics Letters, 页码:141607-141607 , 文章类型: Article,,卷期:2012年100-14]
- A dry single-step process for enhancing the surface area of a silicon microcantilever is described. In this process, a flat microcantilever is irradiated with similar to 100-femto-second-long laser pulses. The silicon su...
- Interface engineering for the passivation of c-Si with O-3-based atomic layer deposited AlOx for solar cell application
[作者:Lee, H; Tachibana, T; Ikeno, N; Hashiguchi, H; Arafune, K; Yoshida, H; Satoh, S; Chikyow, T; Ogura, A,期刊:Applied Physics Letters, 页码:143901-143901 , 文章类型: Article,,卷期:2012年100-14]
- We have investigated the effects of deposition temperature and post-annealing on the passivation performance of AlOx films deposited by O-3-based atomic layer deposition for crystalline Si. We found that the dramatic enh...
- Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films
[作者:Lee, MS; Choi, S; An, CH; Kim, H,期刊:Applied Physics Letters, 页码:143504-143504 , 文章类型: Article,,卷期:2012年100-14]
- Several rare earth elements (Gd, Dy, and Ce) having different valence numbers were doped into a solution-synthesized ZrO2 film, and the corresponding resistive memory characteristics were discussed in relation to the oxy...
- Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
[作者:Lee, W; Park, J; Kim, S; Woo, J; Shin, J; Lee, D; Cha, E; Hwang, H,期刊:Applied Physics Letters, 页码:142106-142106 , 文章类型: Article,,卷期:2012年100-14]
- We demonstrate improved switching uniformity in resistive random-access memory (RRAM) containing metal-doped electrolyte due to thermally agglomerated metallic filaments. Rapid thermal annealing (RTA) produced copper-dop...
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