[摘要]：We have investigated the effects of deposition temperature and post-annealing on the passivation performance of AlOx films deposited by O-3-based atomic layer deposition for crystalline Si. We found that the dramatic enhancement in the passivation performance of room-temperature deposited AlOx films by post-annealing is due to the phase transformation of aluminum silicate to mullite in an AlOx interlayer and the resulting self-aligned AlOx/SiOx interface. This result is interesting for the fabrication of high-performance silicon solar cells with AlOx passivation layers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701280]
