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[摘要]：Polarized photoluminescence from GaAs(100) was generated using shaped ultrashort laser pulses. A train of three pulses separated by an integer multiple of the longitudinal optical phonon period produced p-polarized continuum emission, whereas trains with half-integer multiples of the phonon period as well as single Gaussian pulses produced s-polarized emission. The p-polarized emission is attributed to recombination of carriers in the L-valley, resulting from plasma generation and coherent phonon-excitation by the pulse train, whereas the s-polarized emission is caused by reflection by the melted surface of unpolarized plasma emission. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698469] |
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