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Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films

  作者 Kim, H; Osofsky, M; Auyeung, RCY; Pique, A  
  选自 期刊  Applied Physics Letters;  卷期  2012年100-14;  页码  142403-142403  
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[摘要]Fe/Zr-codoped In2O3 thin films were grown on yttria stabilized zirconia substrates by pulsed laser deposition. The deposited films exhibited ferromagnetism at room temperature with strong magnetic anisotropy, which was influenced by a magnetostriction effect under tensile stress (i.e., c/a > 1). Both the saturation magnetization and anomalous Hall effect (AHE) were enhanced by increasing charge carrier density via Zr-doping. Our observations, including AHE and magnetic anisotropy, provide strong evidence of intrinsic ferromagnetism at room temperature in these materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700864]

 
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