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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共97条记录   Enhancement of anisotropic conductivity, elastic, and dielectric constants in a liquid crystal-gold nanorod system [作者：Sridevi, S; Prasad, SK; Nair, GG; D'Britto, V; Prasad, BLV,期刊：Applied Physics Letters, 页码：151913-151913 , 文章类型： Article，,卷期：2010年97-15] We report electrical conductivity (sigma), dielectric constant (epsilon) and the elastic constant measurements in a nematic liquid crystal (LC) doped with small concentrations of gold nanorods. This LC-nanoparticle compl... Diluted manganese on the bond-centered site in germanium [作者：Decoster, S; Cottenier, S; Wahl, U; Correia, JG; Pereira, LMC; Lacasta, C; Da Silva, MR; Vantomme, A,期刊：Applied Physics Letters, 页码：151914-151914 , 文章类型： Article，,卷期：2010年97-15] The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Su... Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth [作者：Toko, K; Tanaka, T; Ohta, Y; Sadoh, T; Miyao, M,期刊：Applied Physics Letters, 页码：152101-152101 , 文章类型： Article，,卷期：2010年97-15] Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations an... Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime [作者：van Beveren, LHW; Tan, KY; Lai, NS; Dzurak, AS; Hamilton, AR,期刊：Applied Physics Letters, 页码：152102-152102 , 文章类型： Article，,卷期：2010年97-15] We report the fabrication and study of Hall bar field-effect transistors in which an overlapping-gate architecture allows four-terminal measurements of low-density two-dimensional electron systems while maintaining a hig... Study of microscale hydraulic jump phenomenon for hydrodynamic trap-and-release of microparticles [作者：Park, Y; Choi, Y; Mitra, D; Kang, T; Lee, LP,期刊：Applied Physics Letters, 页码：154101-154101 , 文章类型： Article，,卷期：2010年97-15] Easy trap-and-release of microparticles is necessary to study biological cellular behavior. The hydraulic jump phenomenon inspired us to conceive a microfluidic device for the hydrodynamic trap-and-release of micropartic... Geometrical phase transition on WO3 surface [作者：Saberi, AA,期刊：Applied Physics Letters, 页码：154102-154102 , 文章类型： Article，,卷期：2010年97-15] A topographical study on an ensemble of height profiles obtained from atomic force microscopy techniques on various independently grown samples of tungsten oxide WO3 is presented by using ideas from percolation theory. W... Photovoltaic effect and charge storage in single ZnO nanowires (vol 93, 023111, 2008) [作者：Liao, ZM; Xu, J; Zhang, JM; Yu, DP,期刊：Applied Physics Letters, 页码：159901-159901 , 文章类型： Correction，,卷期：2010年97-15] Base metal alloys with self-healing native conductive oxides for electrical contact materials [作者：Aindow, M; Alpay, SP; Liu, Y; Mantese, JV; Senturk, BS,期刊：Applied Physics Letters, 页码：152103-152103 , 文章类型： Article，,卷期：2010年97-15] Base metals for electrical contacts exhibit high bulk conductivities but form low-conductivity native oxide scales in air, leading to unacceptably high contact resistances. Here we show that alloying base metals can lead... Thermoelectric properties of bipolar diffusion effect on In4Se3-xTex compounds [作者：Rhyee, JS; Cho, E; Ahn, K; Lee, KH; Lee, SM,期刊：Applied Physics Letters, 页码：152104-152104 , 文章类型： Article，,卷期：2010年97-15] We present thermoelectric properties and electronic structure of the series compounds of In4Se3-xTex (0.0 <= x <= 3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier... Effects of back interface trap states on the fully depleted strained-silicon-on-insulator capacitorless single transistor dynamic random access memory cells [作者：Kim, MS; Cho, WJ,期刊：Applied Physics Letters, 页码：152105-152105 , 文章类型： Article，,卷期：2010年97-15] A series of systematic experiments were carried out to investigate the effects of silicon back interface state density between silicon channel layer and buried oxide layer on the memory characteristics. The back interfac... Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks [作者：Dingemans, G; Beyer, W; Van de Sanden, MCM; Kessels, WMM,期刊：Applied Physics Letters, 页码：152106-152106 , 文章类型： Article，,卷期：2010年97-15] The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is ... Effect of concentration on low-frequency noise of multiwall carbon nanotubes in high-density polyethylene matrix [作者：Barone, C; Pagano, S; Neitzert, HC,期刊：Applied Physics Letters, 页码：152107-152107 , 文章类型： Article，,卷期：2010年97-15] Transport and noise measurements of multiwall carbon nanotubes in high-density polyethylene matrix are reported. In these composites current transport occurs through a random tunnel junctions network, formed by adjacent ... Carbon impurities and the yellow luminescence in GaN [作者：Lyons, JL; Janotti, A; Van de Walle, CG,期刊：Applied Physics Letters, 页码：152108-152108 , 文章类型： Article，,卷期：2010年97-15] Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N (C-N) is a shallow acceptor,... Highly tunable hybrid quantum dots with charge detection [作者：Rossler, C; Kung, B; Droscher, S; Choi, T; Ihn, T; Ensslin, K; Beck, M,期刊：Applied Physics Letters, 页码：152109-152109 , 文章类型： Article，,卷期：2010年97-15] In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxida... Excited states of the free excitons in CuInSe2 single crystals [作者：Yakushev, MV; Luckert, F; Faugeras, C; Karotki, AV; Mudryi, AV; Martin, RW,期刊：Applied Physics Letters, 页码：152110-152110 , 文章类型： Article，,卷期：2010年97-15] High-quality CuInSe2 single crystals were studied using polarization resolved photoluminescence (PL) and magnetophotoluminescence (MPL). The emission lines related to the first (n=2) excited states for the A and B free e... Conducting interfaces between band insulating oxides: The LaGaO3/SrTiO3 heterostructure [作者：Perna, P; Maccariello, D; Radovic, M; di Uccio, US; Pallecchi, I; Codda, M; Marre, D; Cantoni, C; Gazquez, J; Varela, M; Pennycook, SJ; Granozio, FM,期刊：Applied Physics Letters, 页码：152111-152111 , 文章类型： Article，,卷期：2010年97-15] We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their cry...