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[摘要]：We present thermoelectric properties and electronic structure of the series compounds of In4Se3-xTex (0.0 <= x <= 3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x<0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x >= 2.5) from the temperature-dependent thermal conductivity kappa(T), Seebeck coefficient S(T), and Hall coefficient R-H(T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds. (c) 2010 American Institute of Physics. [doi:10.1063/1.3493269] |
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