- Organization of silicon nanocrystals by localized electrochemical etching
[作者:Ayari-Kanoun, A; Drouin, D; Beauvais, J; Lysenko, V; Nychyporuk, T; Souifi, A,期刊:Applied Physics Letters, 页码:153105-153105 , 文章类型: Article,,卷期:2009年95-15]
- An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and...
- Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces
[作者:Wu, JH; Ye, W; Cardozo, BL; Saltzman, D; Sun, K; Sun, H; Mansfield, JF; Goldman, RS,期刊:Applied Physics Letters, 页码:153107-153107 , 文章类型: Article,,卷期:2009年95-15]
- We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga+ FIB irradiation of G...
- Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy
[作者:Gaitas, A; Zhu, WB; Gulari, N; Covington, E; Kurdak, C,期刊:Applied Physics Letters, 页码:153108-153108 , 文章类型: Article,,卷期:2009年95-15]
- Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20 nm titanium thin films on SiO2/Si3N4/SiO2 cantilevers. These thin films are near the metal-insulator transition regime such that a...
- An inverted organic solar cell with an ultrathin Ca electron-transporting layer and MoO3 hole-transporting layer
[作者:Zhao, DW; Liu, P; Sun, XW; Tan, ST; Ke, L; Kyaw, AKK,期刊:Applied Physics Letters, 页码:153304-153304 , 文章类型: Article,,卷期:2009年95-15]
- An inverted organic solar cell based on poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C-61 (PCBM) was fabricated with an ultrathin Ca electron-transporting layer and MoO3 hole-transporting ...
- Continuous particle assembly in a capillary cell
[作者:Xu, L; Neild, A; Ng, TW; Shao, FF,期刊:Applied Physics Letters, 页码:153501-153501 , 文章类型: Article,,卷期:2009年95-15]
- Capillary force mechanisms have the advantages of providing the motive force to move groups of particles to locations of interest while holding them in place, offering delicateness, and obviating the use external energy ...
- Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface
[作者:Park, CH; Lee, G; Lee, KH; Im, S; Lee, BH; Sung, MM,期刊:Applied Physics Letters, 页码:153502-153502 , 文章类型: Article,,卷期:2009年95-15]
- We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates un...
- ZnO-based metal-semiconductor field-effect transistors on glass substrates
[作者:Frenzel, H; Lorenz, M; Lajn, A; von Wenckstern, H; Biehne, G; Hochmuth, H; Grundmann, M,期刊:Applied Physics Letters, 页码:153503-153503 , 文章类型: Article,,卷期:2009年95-15]
- We investigate the influence of quartz glass and borosilicate glass substrates on the electrical properties of ZnO-based metal-semiconductor field-effect transistors (MESFETs). The n-type ZnO thin-film channels were grow...
- Diminish the screen effect in field emission via patterned and selective edge growth of ZnO nanorod arrays
[作者:Liu, NS; Fang, GJ; Zeng, W; Long, H; Yuan, LY; Zhao, XZ,期刊:Applied Physics Letters, 页码:153505-153505 , 文章类型: Article,,卷期:2009年95-15]
- The authors report on the field emission from controlled selective grown zinc oxide (ZnO) nanorod arrays by hydrothermal reaction. With the combined effect from a ZnO seed layer and a passivation layer for nanorod growth...
- Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications
[作者:Perez-Wurfl, I; Hao, XJ; Gentle, A; Kim, DH; Conibeer, G; Green, MA,期刊:Applied Physics Letters, 页码:153506-153506 , 文章类型: Article,,卷期:2009年95-15]
- We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p-type and phosphorus for n-type do...
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