个性化文献订阅>期刊> Applied Physics Letters
 

ZnO-based metal-semiconductor field-effect transistors on glass substrates

  作者 Frenzel, H; Lorenz, M; Lajn, A; von Wenckstern, H; Biehne, G; Hochmuth, H; Grundmann, M  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-15;  页码  153503-153503  
  关联知识点  
 

[摘要]We investigate the influence of quartz glass and borosilicate glass substrates on the electrical properties of ZnO-based metal-semiconductor field-effect transistors (MESFETs). The n-type ZnO thin-film channels were grown by pulsed-laser deposition and ME

 
      被申请数(0)  
 

[全文传递流程]

一般上传文献全文的时限在1个工作日内