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  • In-plane interdot carrier transfer in InAs/GaAs quantum dots
    [作者:Bhattacharyya, J; Zybell, S; Winnerl, S; Helm, M; Hopkinson, M; Wilson, LR; Schneider, H,期刊:Applied Physics Letters, 页码:152101-152101 , 文章类型: Article,,卷期:2012年100-15]
  • Using time resolved photoluminescence (PL) quenching measurements, we investigated inplane carrier transfer in InAs/GaAs self-assembled quantum dots (QDs). THz pulses from a free-electron laser tuned to the intersublevel...
  • Tunable nanometer electrode gaps by MeV ion irradiation
    [作者:Cheang-Wong, JC; Narumi, K; Schurmann, GM; Aziz, MJ; Golovchenko, JA,期刊:Applied Physics Letters, 页码:153108-153108 , 文章类型: Article,,卷期:2012年100-15]
  • We report the use of MeV ion-irradiation-induced plastic deformation of amorphous materials to fabricate electrodes with nanometer-sized gaps. Plastic deformation of the amorphous metal Pd80Si20 is induced by 4.64 MeV O2...
  • Scaling growth kinetics of self-induced GaN nanowires
    [作者:Dubrovskii, VG; Consonni, V; Geelhaar, L; Trampert, A; Riechert, H,期刊:Applied Physics Letters, 页码:153101-153101 , 文章类型: Article,,卷期:2012年100-15]
  • We present a kinetic model showing why self-induced GaN nanowires synthesized by molecular beam epitaxy obey the scaling growth laws. Our model explains the scaling behavior from kinetic considerations of the step flow r...