[摘要]：The impact of using multiple cycles of trimethyl-aluminum (TMA) prior to Al2O3 deposition on the properties of (NH4)(2)S treated In0.53Ga0.47As and GaAs substrates was investigated by in situ x-ray photoelectron spectroscopy. Increasing the number of TMA cycles prior to Al2O3 atomic layer deposition (ALD) was seen to decrease the concentration of As-As detected at the oxide-semiconductor interface. The impact of annealing the (NH4)(2)S treated GaAs surface in situ prior to ALD, in various environments, was also investigated. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702885]
