[摘要]：The highest photoresponsivity and an internal quantum efficiency exceeding 70% at 1.55 eV were achieved for 400 nm thick undoped n-type BaSi2 epitaxial layers formed on a n(+)-BaSi2/p(+)-Si tunnel junction (TJ) on Si(111). The diffusion of Sb atoms was effectively suppressed by an intermediate polycrystalline Si layer grown by solid phase epitaxy, located between the TJ and undoped BaSi2 layers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703585]
