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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共100条记录   ZnO:Al cathode for highly efficient, semitransparent 4% organic solar cells utilizing TiOx and aluminum interlayers - art. no. 073307 [作者：Bauer, A; Wahl, T; Hanisch, J; Ahlswede, E,期刊：Applied Physics Letters, 页码：73307-73307 , 文章类型： Article，,卷期：2012年100-7] We report on the fabrication of highly efficient, semitransparent bulk heterojunction solar cells comprising poly[[9-(1-octylnonyl)-9h-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenedi... Asymmetric coalescence of reactively wetting droplets - art. no. 071903 [作者：Zheng, CX; Tang, WX; Jesson, DE,期刊：Applied Physics Letters, 页码：71903-71903 , 文章类型： Article，,卷期：2012年100-7] Coalescence of droplets during reactive wetting is investigated for the liquid Ga/GaAs(001) system. In situ mirror electron microscopy reveals that coalescence predominantly involves the motion of one reactive droplet re... Enhancement of thermoelectric properties in graphene nanoribbons modulated with stub structures - art. no. 073105 [作者：Xie, ZX; Tang, LM; Pan, CN; Li, KM; Chen, KQ; Duan, WH,期刊：Applied Physics Letters, 页码：73105-73105 , 文章类型： Article，,卷期：2012年100-7] The thermoelectric properties in graphene nanoribbons modulated with stub structures are studied using atomistic simulation of electron and phonon transport. The results show that the phonon transport is dramatically sup... Enhancing magnetic vacancies in semiconductors by strain - art. no. 072401 [作者：Kan, E; Wu, F; Zhang, YM; Xiang, HJ; Lu, RF; Xiao, CY; Deng, KM; Su, HB,期刊：Applied Physics Letters, 页码：72401-72401 , 文章类型： Article，,卷期：2012年100-7] Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective magnetism is impeded by low vacancy concentration. To improve the vacancy concentration, we study the effect of external h... Material dependence of Casimir forces: Gradient expansion beyond proximity - art. no. 074110 [作者：Bimonte, G; Emig, T; Kardar, M,期刊：Applied Physics Letters, 页码：74110-74110 , 文章类型： Article，,卷期：2012年100-7] A widely used method for estimating Casimir interactions [H. B. G. Casimir, Proc. K. Ned. Akad. Wet. 51, 793 (1948)] between gently curved material surfaces at short distances is the proximity force approximation (PFA). ... Mechanical cleaning of graphene - art. no. 073110 [作者：Goossens, AM; Calado, VE; Barreiro, A; Watanabe, K; Taniguchi, T; Vandersypen, LMK,期刊：Applied Physics Letters, 页码：73110-73110 , 文章类型： Article，,卷期：2012年100-7] Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore ... Shear-band arrest and stress overshoots during inhomogeneous flow in a metallic glass - art. no. 071904 [作者：Maass, R; Klaumunzer, D; Villard, G; Derlet, PM; Loffler, JF,期刊：Applied Physics Letters, 页码：71904-71904 , 文章类型： Article，,卷期：2012年100-7] At the transition from a static to a dynamic deformation regime of a shear band in bulk metallic glasses, stress transients in terms of overshoots are observed. We interpret this phenomenon with a repeated shear-melting ... Sign change in the organic magnetoresistance of tris(8-hydroxyquinolinato)aluminum upon annealing - art. no. 073302 [作者：Kang, H; Lee, IJ; Yoon, CS,期刊：Applied Physics Letters, 页码：73302-73302 , 文章类型： Article，,卷期：2012年100-7] We report the sign change in the magnetoresistance of a tris(8-hydroxyquinolinato)aluminum film with the morphological change from amorphous to crystalline state upon annealing. The negative component of the magnetoresis... Atomic structure of a Sigma 3 [110]/(111) grain boundary in CeO2 - art. no. 073109 [作者：Feng, B; Hojo, H; Mizoguchi, T; Ohta, H; Findlay, SD; Sato, Y; Shibata, N; Yamamoto, T; Ikuhara, Y,期刊：Applied Physics Letters, 页码：73109-73109 , 文章类型： Article，,卷期：2012年100-7] The atomic structure of a Sigma 3 [110]/(111) grain boundary in CeO2 was studied by scanning transmission electron microscopy, electron energy loss spectroscopy, and the first-principles calculations. It was revealed tha... Mechanism for resistive switching in an oxide-based electrochemical metallization memory - art. no. 072101 [作者：Peng, SS; Fei, ZG; Chen, XX; Zhu, XJ; Hu, BL; Pan, L; Chen, C; Li, RW,期刊：Applied Physics Letters, 页码：72101-72101 , 文章类型： Article，,卷期：2012年100-7] A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and reju... Slip boundary for fluid flow at rough solid surfaces - art. no. 074102 [作者：Chen, YP; Zhang, CB; Shi, MH; Peterson, GP,期刊：Applied Physics Letters, 页码：74102-74102 , 文章类型： Article，,卷期：2012年100-7] A molecular dynamics simulation of slip boundary for fluid flow past a solid surface incorporating roughness effect as characterized by fractal geometry has been conducted with a focus on the origin of slip, fluid struct... Chalcogenide glass surface passivation of a GaAs bipolar transistor for unique avalanche terahertz emitters and picosecond switches - art. no. 073505 [作者：Vainshtein, S; Javadyan, V; Duan, GY; Tsendin, K; Hovhannisyan, R; Kostamovaara, J,期刊：Applied Physics Letters, 页码：73505-73505 , 文章类型： Article，,卷期：2012年100-7] The ultra-narrow "collapsing" field domains discovered recently in avalanching GaAs bipolar junction transistor provide a physical basis for designing unique THz emitters and superfast switches. Reliability in devices op... Characteristics of polarization-doped N-face III-nitride light-emitting diodes - art. no. 073507 [作者：Dong, KX; Chen, DJ; Liu, B; Lu, H; Chen, P; Zhang, R; Zheng, YD,期刊：Applied Physics Letters, 页码：73507-73507 , 文章类型： Article，,卷期：2012年100-7] The electrical and optical performances of N-face GaN-based light-emitting diodes ( LEDs) with polarization-induced p-type doping are investigated theoretically. In comparison with the polarization-doped metal-face LED, ... Experimental realization of superconducting quantum interference devices with topological insulator junctions - art. no. 072602 [作者：Veldhorst, M; Molenaar, CG; Wang, XL; Hilgenkamp, H; Brinkman, A,期刊：Applied Physics Letters, 页码：72602-72602 , 文章类型： Article，,卷期：2012年100-7] We demonstrate topological insulator (Bi2Te3) dc SQUIDs, based on superconducting Nb leads coupled to nano-fabricated Nb-Bi2Te3-Nb Josephson junctions. The high reproducibility and controllability of the fabrication proc... Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit - art. no. 073701 [作者：Jang, HJ; Cho, WJ,期刊：Applied Physics Letters, 页码：73701-73701 , 文章类型： Article，,卷期：2012年100-7] High-performance dual-gate (DG) ion-sensitive field-effect transistors (ISFETs) beyond the Nernstian limit of 59 mV/pH were realized using the fully depleted (FD) silicon-on-insulator (SOI) substrate. The FD SOI-based DG... Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source - art. no. 072107 [作者：Wong, MH; Wu, F; Hurni, CA; Choi, S; Speck, JS; Mishra, UK,期刊：Applied Physics Letters, 页码：72107-72107 , 文章类型： Article，,卷期：2012年100-7] InAlN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAlN were verified by high resolution x-...