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Enhancing magnetic vacancies in semiconductors by strain - art. no. 072401

  作者 Kan, E; Wu, F; Zhang, YM; Xiang, HJ; Lu, RF; Xiao, CY; Deng, KM; Su, HB  
  选自 期刊  Applied Physics Letters;  卷期  2012年100-7;  页码  72401-72401  
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[摘要]Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective magnetism is impeded by low vacancy concentration. To improve the vacancy concentration, we study the effect of external hydrostatic strain on the vacancy fo

 
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