Chalcogenide glass surface passivation of a GaAs bipolar transistor for unique avalanche terahertz emitters and picosecond switches - art. no. 073505

[摘要]：The ultra-narrow "collapsing" field domains discovered recently in avalanching GaAs bipolar junction transistor provide a physical basis for designing unique THz emitters and superfast switches. Reliability in devices operating near their volume breakdown

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