Mechanism for resistive switching in an oxide-based electrochemical metallization memory - art. no. 072101

[摘要]：A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and rejuvenation occur at the ZnO/Pt (or AZ

[全文传递流程]：

一般上传文献全文的时限在1个工作日内