- Pure optical and reversible optically driven nanowriting of azobenzene block copolymers - art. no. 083103
[作者:Tantussi, F; Menghetti, S; Caldi, E; Fuso, F; Allegrini, M; Galli, G,期刊:Applied Physics Letters, 页码:83103-83103 , 文章类型: Article,,卷期:2012年100-8]
- We report on pure optical nanowriting in the near-field of spin-coated films of a specifically synthesized azobenzene-containing block copolymer. Writing is accomplished by linear polarized blue laser radiation, which is...
- Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films - art. no. 082905
[作者:Zhou, DY; Muller, J; Xu, J; Knebel, S; Brauhaus, D; Schroder, U,期刊:Applied Physics Letters, 页码:82905-82905 , 文章类型: Article,,卷期:2012年100-8]
- Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electro...
- Interface structure governed by plastic and structural dissimilarity in perovskite La0.7Sr0.3MnO3 nanodots on rock-salt MgO substrates - art. no. 083104
[作者:Abellan, P; Zabaleta, J; Santiso, J; Casanove, MJ; Dix, N; Aguiar, J; Browning, ND; Mestres, N; Puig, T; Obradors, X; Sandiumenge, F,期刊:Applied Physics Letters, 页码:83104-83104 , 文章类型: Article,,卷期:2012年100-8]
- Self-assembled La0.7Sr0.3MnO3 perovskite nanodots have been grown on highly mismatched rock-salt type MgO substrates by chemical solution deposition. The interfacial dislocation structure indicates that the relaxation me...
- Interfacial chemistry in an InAs/GaSb superlattice studied by pulsed laser atom probe tomography - art. no. 083109
[作者:Muller, M; Gault, B; Field, M; Sullivan, GJ; Smith, GDW; Grovenor, CRM,期刊:Applied Physics Letters, 页码:83109-83109 , 文章类型: Article,,卷期:2012年100-8]
- Pulsed laser atom probe tomography was employed to study the interfacial chemistry in an InAs/GaSb superlattice nanostructure. The InAs-on-GaSb anion sublattice interface was found to be wider than the GaSb-on-InAs inter...
- A unified model for unipolar resistive random access memory - art. no. 083509
[作者:Lee, K; Jang, JS; Kwon, Y; Lee, KH; Park, YK; Choi, WY,期刊:Applied Physics Letters, 页码:83509-83509 , 文章类型: Article,,卷期:2012年100-8]
- A unified model for resistive random access memory has been proposed for the accurate prediction of forming, reset, and set operations. Unlike conventional random circuit breaker network model, the unified model can simu...
- AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes - art. no. 081110
[作者:Chae, DJ; Kim, DY; Kim, TG; Sung, YM; Kim, MD,期刊:Applied Physics Letters, 页码:81110-81110 , 文章类型: Article,,卷期:2012年100-8]
- In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was fo...
- Electronic structures of silicene fluoride and hydride - art. no. 083102
[作者:Ding, Y; Wang, YL,期刊:Applied Physics Letters, 页码:83102-83102 , 文章类型: Article,,卷期:2012年100-8]
- Silicene is the graphene-like silicon nanosheet, which has been synthesized very recently [B. Lalmi, H. Oughaddou, H. Enriquez, A. Kara, S. Vizzini, B. Ealet, and B. Aufray, Appl. Phys. Lett. 97, 223109 (2010)]. Using fi...
- Enhanced electrical stability of organic thin-film transistors with polymer semiconductor-insulator blended active layers - art. no. 083302
[作者:Lee, J; Jung, JY; Kim, DH; Kim, JY; Lee, BL; Park, JI; Chung, JW; Park, JS; Koo, B; Jin, YW; Lee, S,期刊:Applied Physics Letters, 页码:83302-83302 , 文章类型: Article,,卷期:2012年100-8]
- We report on an enhanced electrical stability of organic thin-film transistors (OTFTs), where an organic semiconductor (poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12)) and a polymer insulator (poly(m...
- Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity - art. no. 083506
[作者:Dyer, GC; Preu, S; Aizin, GR; Mikalopas, J; Grine, AD; Reno, JL; Hensley, JM; Vinh, NQ; Gossard, AC; Sherwin, MS; Allen, SJ; Shaner, EA,期刊:Applied Physics Letters, 页码:83506-83506 , 文章类型: Article,,卷期:2012年100-8]
- A multi-gate high electron mobility transistor coupled to a log-periodic antenna was engineered to detect sub-terahertz radiation through resonant excitation of plasmon modes in the channel. The device was integrated wit...
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