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A unified model for unipolar resistive random access memory - art. no. 083509

  作者 Lee, K; Jang, JS; Kwon, Y; Lee, KH; Park, YK; Choi, WY  
  选自 期刊  Applied Physics Letters;  卷期  2012年100-8;  页码  83509-83509  
  关联知识点  
 

[摘要]A unified model for resistive random access memory has been proposed for the accurate prediction of forming, reset, and set operations. Unlike conventional random circuit breaker network model, the unified model can simulate realistic cell structures with

 
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