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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共95条记录   Giant magnetic domain-wall resistance in phase-separated manganite films [作者：Granja, L; Hueso, LE; Prieto, JL; Levy, P; Mathur, ND,期刊：Applied Physics Letters, 页码：253501-253501 , 文章类型： Article，,卷期：2010年97-25] The top and bottom electrodes of the ferromagnetic manganite La0.7Ca0.3MnO3 may be magnetically decoupled by a La0.59Ca0.41MnO3 interlayer in which ferromagnetic and paramagnetic phases coexist. In mesas fabricated from ... Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors [作者：Urabe, Y; Yokoyama, M; Takagi, H; Yasuda, T; Miyata, N; Yamada, H; Fukuhara, N; Hata, M; Takenaka, M; Takagi, S,期刊：Applied Physics Letters, 页码：253502-253502 , 文章类型： Article，,卷期：2010年97-25] We report on In0.53Ga0.47As(100)-on-insulator metal-insulator-semiconductor field-effect transistors (InGaAs-OI MISFETs) on Si wafers with standard front-gate configuration. The channel mobility of the InGaAs-OI MISFETs ... Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-kappa trapping layer [作者：Zhu, CX; Huo, ZL; Xu, ZG; Zhang, MH; Wang, Q; Liu, J; Long, SB; Liu, M,期刊：Applied Physics Letters, 页码：253503-253503 , 文章类型： Article，,卷期：2010年97-25] A high-kappa based charge trap flash (CTF) memory structure using bandgap engineered trapping layer HfO2/Al2O3/HfO2 (HAH) has been demonstrated for multilevel cell applications. Compared to a single HfO2 trapping layer, ... Electrically pumped ultraviolet random lasing from ZnO films: Compensation between optical gain and light scattering [作者：Tian, Y; Ma, XY; Jin, L; Yang, DR,期刊：Applied Physics Letters, 页码：251115-251115 , 文章类型： Article，,卷期：2010年97-25] We have demonstrated the compensation between optical gain and light scattering in electrically pumped random lasing (RL) from ZnO films through investigating the electroluminescence of MgxZn1-xO/ZnO (x = 0.25 and 1) het... Real-time single-shot three-dimensional and contrast-enhanced optical coherence imaging using phase coherent photorefractive quantum wells [作者：Kabir, A; Dongol, A; Wang, X; Wagner, HP,期刊：Applied Physics Letters, 页码：251116-251116 , 文章类型： Article，,卷期：2010年97-25] We demonstrate two real-time optical coherence imaging acquisition modes using all-optical phase coherent photorefractive ZnSe quantum wells as dynamic holographic films. These films use the coherence of excitons for tim... Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence [作者：Connelly, BC; Metcalfe, GD; Shen, HE; Wraback, M,期刊：Applied Physics Letters, 页码：251117-251117 , 文章类型： Article，,卷期：2010年97-25] We present a direct optical measurement of minority carrier lifetime as a function of temperature and excitation density in long-wave infrared InAs/GaSb type II superlattices using time-resolved photoluminescence. Result... rf mode switching in a relativistic magnetron with diffraction output [作者：Liu, MQ; Michel, C; Prasad, S; Fuks, MI; Schamiloglu, E; Liu, CL,期刊：Applied Physics Letters, 页码：251501-251501 , 文章类型： Article，,卷期：2010年97-25] The relativistic magnetron with diffraction output (RMDO) has demonstrated nearly 70% efficiency in recent simulations. This letter reports a rapid mode switching technique in the RMDO using a low power, short-pulse, ext... Surface photoemission in a high-brightness electron beam radio frequency gun [作者：Qian, HJ; Murphy, JB; Shen, Y; Tang, CX; Wang, XJ,期刊：Applied Physics Letters, 页码：253504-253504 , 文章类型： Article，,卷期：2010年97-25] We report the experimental characterization of high-brightness electron beam generation from a magnesium (Mg) photocathode. Both the quantum efficiency (QE) and the thermal emittance of an Mg cathode are experimentally i... An electrical switching device controlled by a magnetic field-dependent impact ionization process [作者：Lee, J; Joo, S; Kim, T; Kim, KH; Rhie, K; Hong, J; Shin, KH,期刊：Applied Physics Letters, 页码：253505-253505 , 文章类型： Article，,卷期：2010年97-25] An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The ... Using competitive protein adsorption to measure fibrinogen in undiluted human serum [作者：Choi, S; Wang, R; Lajevardi-Khosh, A; Chae, J,期刊：Applied Physics Letters, 页码：253701-253701 , 文章类型： Article，,卷期：2010年97-25] We report a unique sensing mechanism based on competitive protein adsorption to measure fibrinogen, a cardiovascular biomarker, in undiluted human serum. The method uses physical adsorption of proteins to a surface rathe... DNA base (cytosine) modified/capped ultrasmall Gd2S3:Eu3+ gadofluoroprobes for platelet isolation [作者：Dutta, RK; Sharma, PK; Pandey, AC,期刊：Applied Physics Letters, 页码：253702-253702 , 文章类型： Article，,卷期：2010年97-25] The present letter deals with the synthesis of ultrasmall Gd2S3:Eu3+ nanoparticles and their surface modification with "cytosine," a nucleobase present in DNA/RNA. These nanoparticles show orthorhombic (P-nma) crystal sy... Resonant manifestation of intrinsic nonlinearity within electroelastic micropower generators [作者：Stanton, SC; Erturk, A; Mann, BP; Inman, DJ,期刊：Applied Physics Letters, 页码：254101-254101 , 文章类型： Article，,卷期：2010年97-25] This letter investigates the nonlinear response of a bimorph energy harvester comprised of lead zirconate titanate (PZT-5A) laminates. For near resonant excitations, we demonstrate significant intrinsic nonlinear behavio... Conducting interfaces between band insulating oxides: The LaGaO3/SrTiO3 heterostructure (vol 97, 152111, 2010) [作者：Perna, P; Maccariello, D; Radovic, M; di Uccio, US; Pallecchi, I; Codda, M; Marre, D; Cantoni, C; Gazquez, J; Varela, M; Pennycook, SJ; Granozio, FM,期刊：Applied Physics Letters, 页码：259901-259901 , 文章类型： Correction，,卷期：2010年97-25] Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy [作者：Radtke, G; Couillard, M; Botton, GA; Zhu, D; Humphreys, CJ,期刊：Applied Physics Letters, 页码：251901-251901 , 文章类型： Article，,卷期：2010年97-25] The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark f... The atomic structure and polarization of strained SrTiO3/Si [作者：Kumah, DP; Reiner, JW; Segal, Y; Kolpak, AM; Zhang, Z; Su, D; Zhu, Y; Sawicki, MS; Broadbridge, CC; Ahn, CH; Walker, FJ,期刊：Applied Physics Letters, 页码：251902-251902 , 文章类型： Article，,卷期：2010年97-25] For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine th... Diamond as a high pressure gauge up to 2.7 Mbar [作者：Dubrovinskaia, N; Dubrovinsky, L; Caracas, R; Hanfland, M,期刊：Applied Physics Letters, 页码：251903-251903 , 文章类型： Article，,卷期：2010年97-25] A pressure gauge is a key issue of any high pressure experiment in a diamond anvil cell (DAC). Here we present a method of in situ synthesis of microcrystals of diamond that can be further used as a pressure standard in ...