【文章名】Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
[摘要]：We present a direct optical measurement of minority carrier lifetime as a function of temperature and excitation density in long-wave infrared InAs/GaSb type II superlattices using time-resolved photoluminescence. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination, with a lifetime of 30 ns at 77 K. Below 40 K, we observe a freeze-out of carriers and increased contributions from radiative recombination. High-injection measurements yield a radiative recombination coefficient of 1.8 x 10(-10) cm(3)/s and an upper limit of the Auger recombination coefficient of 10(-28) cm(6)/s at 60 K. An acceptor level of similar to 20 meV above the valence band is also determined. (C) 2010 American Institute of Physics. [doi:10.1063/1.3529458]
