[摘要]：The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. < 11 (2) over bar0 >(AlN)parallel to < 110 > Si and < 0001 >(AlN)parallel to < 111 >(Si) epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527928]
