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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共97条记录   Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory [作者：Gay, G; Belhachemi, D; Colonna, JP; Minoret, S; Brianceau, P; Lafond, D; Baron, T; Molas, G; Jalaguier, E; Beaurain, A; Pelissier, B; Vidal, V; De Salvo, B,期刊：Applied Physics Letters, 页码：152112-152112 , 文章类型： Article，,卷期：2010年97-15] We present chemical vapor deposition of titanium nitride nanocrystals (ncs) on silicon nitride (SiN). Ncs are passivated in situ by a silicon shell and encapsulated in SiN. High density (3 x 10(12) cm(-2)), crystalline a... The origin of the resistance change in GeSbTe films [作者：Jang, MH; Park, SJ; Park, SJ; Cho, MH; Kurmaev, EZ; Finkelstein, LD; Chang, GS,期刊：Applied Physics Letters, 页码：152113-152113 , 文章类型： Article，,卷期：2010年97-15] Amorphous Ge2Sb2Te5 (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge-Ge homopolar bonds in the films. Raman spectra a... Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing [作者：Julin, JK; Koppinen, PJ; Maasiltaa, IJ,期刊：Applied Physics Letters, 页码：152501-152501 , 文章类型： Article，,卷期：2010年97-15] We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400 degrees C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultrahigh vacuu... Mapping of localized spin-wave excitations by near-field Brillouin light scattering [作者：Jersch, J; Demidov, VE; Fuchs, H; Rott, K; Krzysteczko, P; Munchenberger, J; Reiss, G; Demokritov, SO,期刊：Applied Physics Letters, 页码：152502-152502 , 文章类型： Article，,卷期：2010年97-15] We report on the experimental study of the spatial characteristics of high-frequency spin-wave modes localized at the edges of micrometer-size in-plane magnetized permalloy ellipses. Using a near-field Brillouin light sc... Low damping resonant magnetoelectric sensors [作者：Greve, H; Woltermann, E; Jahns, R; Marauska, S; Wagner, B; Knochel, R; Wuttig, M; Quandt, E,期刊：Applied Physics Letters, 页码：152503-152503 , 文章类型： Article，,卷期：2010年97-15] The signal of magnetic sensors based on resonant cantilevers comprised of elastically coupled piezoelectric and magnetostrictive materials increases as the damping decreases. Here, we demonstrate that air damping which n... Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture [作者：Lyle, A; Harms, J; Patil, S; Yao, XF; Lilja, DJ; Wang, JP,期刊：Applied Physics Letters, 页码：152504-152504 , 文章类型： Article，,卷期：2010年97-15] We experimentally demonstrated a magnetic tunnel junction (MTJ) based circuit that allows direct communication between elements without intermediate sensing amplifiers. The input of the circuit consists of three MTJs con... Strain-driven phase transitions and associated dielectric/piezoelectric anomalies in BiFeO3 thin films [作者：Huang, CW; Chu, YH; Chen, ZH; Wang, JL; Sritharan, T; He, Q; Ramesh, R; Chen, L,期刊：Applied Physics Letters, 页码：152901-152901 , 文章类型： Article，,卷期：2010年97-15] Strain-driven phase transitions and related intrinsic polarization, dielectric, and piezoelectric properties for single-domain films were studied for BiFeO3 using phenomenological Landau-Devonshire theory. A stable and m... Phase coexistence near a morphotropic phase boundary in Sm-doped BiFeO3 films [作者：Emery, SB; Cheng, CJ; Kan, D; Rueckert, FJ; Alpay, SP; Nagarajan, V; Takeuchi, I; Wells, BO,期刊：Applied Physics Letters, 页码：152902-152902 , 文章类型： Article，,卷期：2010年97-15] We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron x-ray diffraction, carried out in a temperature range of 25 to 700... Sign reversal in the dielectric anisotropy as functions of temperature and frequency in the nematic phase of a bent-core mesogen [作者：Jang, Y; Panov, VP; Keith, C; Tschierske, C; Vij, JK,期刊：Applied Physics Letters, 页码：152903-152903 , 文章类型： Article，,卷期：2010年97-15] The sign reversal in the dielectric anisotropy (epsilon(parallel to)' -epsilon(perpendicular to)') from positive to negative is observed for 4-cyanoresorcinol bisbenzoate system with temperature and frequency in the nema... Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality [作者：Henkel, C; Bethge, O; Abermann, S; Puchner, S; Hutter, H; Bertagnolli, E,期刊：Applied Physics Letters, 页码：152904-152904 , 文章类型： Article，,卷期：2010年97-15] We report on the improvement of electrical quality of (100)-Ge/high-k-dielectric interfaces by introducing thin Pt top layers on the dielectric and subsequent oxidative treatments or using a Pt-deposition process with in... Tensile strained island growth at step-edges on GaAs(110) [作者：Simmonds, PJ; Lee, ML,期刊：Applied Physics Letters, 页码：153101-153101 , 文章类型： Article，,卷期：2010年97-15] We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we con... Graphene as a transparent conductive support for studying biological molecules by transmission electron microscopy [作者：Nair, RR; Blake, P; Blake, JR; Zan, R; Anissimova, S; Bangert, U; Golovanov, AP; Morozov, SV; Geim, AK; Novoselov, KS; Latychevskaia, T,期刊：Applied Physics Letters, 页码：153102-153102 , 文章类型： Article，,卷期：2010年97-15] We demonstrate the application of graphene as a support for imaging individual biological molecules in transmission electron microscope (TEM). A simple procedure to produce free-standing graphene membranes has been desig... Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications [作者：Mattmann, M; Bechstein, D; Roman, C; Chikkadi, K; Hierold, C,期刊：Applied Physics Letters, 页码：153103-153103 , 文章类型： Article，,卷期：2010年97-15] We investigate the hysteresis behavior in carbon nanotube (CNT) field effect transistors (CNFETs) upon pulsed gate voltages (V-g) above ambient temperature within 300-390 K. Assuming charge trapping near the CNT channel ... rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers [作者：Hoey, ML; Carlson, JB; Osgood, RM; Kimball, B; Buchwald, W,期刊：Applied Physics Letters, 页码：153104-153104 , 文章类型： Article，,卷期：2010年97-15] Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulat... Different growth rates for catalyst-induced and self-induced GaN nanowires [作者：Cheze, C; Geelhaar, L; Jenichen, B; Riechert, H,期刊：Applied Physics Letters, 页码：153105-153105 , 文章类型： Article，,卷期：2010年97-15] The catalyst- and self-induced pathways of GaN nanowire growth by molecular beam epitaxy are compared. The catalyst-induced nanowires elongate faster than the self-induced ones and their growth rate is fully determined b... Atomistic simulation of plasticity in silicon nanowires [作者：Cleri, F; Ishida, T; Collard, D; Fujita, H,期刊：Applied Physics Letters, 页码：153106-153106 , 文章类型： Article，,卷期：2010年97-15] We study the tensile deformation of polycrystalline Si nanowires by means of molecular dynamics simulations. The initial microstructure is composed by a network of nanocrystals glued together by a thin layer of amorphous...