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[摘要]：We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400 degrees C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultrahigh vacuum and high vacuum fabricated samples demonstrated a significant reduction in the 1/f noise level. Temperature dependence of the noise was studied between 4.2 and 340 K, with a linear dependence below 100 K, but a faster increase above. The results are consistent with a model where the density of charge trapping two level-systems within the tunneling barrier is reduced by the annealing process. (c) 2010 American Institute of Physics. [doi:10.1063/1.3500823] |
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