| |
[摘要]：We report on the improvement of electrical quality of (100)-Ge/high-k-dielectric interfaces by introducing thin Pt top layers on the dielectric and subsequent oxidative treatments or using a Pt-deposition process with inherent oxidative components. Here, deposition of thin physical vapor deposition-Pt layers, combined with subsequent oxygen treatments, or oxygen assisted atomic layer deposition of Pt on these dielectrics, is applied. Strong reduction of interface trap densities down to mid-10(11) eV(-1) cm(-2) is achieved. The approach is shown for Pt/ZrO2 /La2O3 /Ge, Pt/ZrO2/GeO2/Ge, and Pt/ZrO2/Ge gate stacks. By x-ray photoelectron spectroscopy evidence is given for oxygen enrichment at Ge/high-k-dielectric interfaces, to be responsible for the improved electrical properties. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3500822] |
|
