Tensile strained island growth at step-edges on GaAs(110)

[摘要]：We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we consider the kinetics of strain relief within the context of a model for dislocation glide as a function of surface orientation and sign of strain. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3498676]

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