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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共89条记录   Size-dependent electro-osmosis in a microchannel with low-permittivity, salt-free media [作者：Chang, FM; Chang, YW; Sheng, YJ; Tsao, HK,期刊：Applied Physics Letters, 页码：164101-164101 , 文章类型： Article，,卷期：2010年97-16] Electro-osmosis is the preferred transport mechanism in microfluidic systems. The electro-osmotic mobility in an aqueous solution is essentially independent of the microchannel size. However, in low-permittivity solvents... Breakdown temperature of electrons in SF6 gas [作者：Uhm, HS; Choi, EH; Cho, G; Ryu, HY,期刊：Applied Physics Letters, 页码：161501-161501 , 文章类型： Article，,卷期：2010年97-16] The breakdown temperature T-b of electrons in SF6 gas is obtained by expressing the ionization and attachment coefficients of the gas in terms of the electron temperature T-e assuming that the electron energy in the gas ... Microplasma-induced surface engineering of silicon nanocrystals in colloidal dispersion [作者：Svrcek, V; Mariotti, D; Kondo, M,期刊：Applied Physics Letters, 页码：161502-161502 , 文章类型： Article，,卷期：2010年97-16] We report on an atmospheric-pressure dc microplasma that can be used to passivate silicon nanocrystals (SiNCs) in ethanol and that stabilizes their optoelectronic properties. We show that microplasma processing enhances ... The role of Bi3+ ions in magneto-optic Ce and Bi comodified epitaxial iron garnet films [作者：Hwang, JY; Ferrera, M; Razzari, L; Pignolet, A; Morandotti, R,期刊：Applied Physics Letters, 页码：161901-161901 , 文章类型： Article，,卷期：2010年97-16] Epitaxial Ce and Bi comodified iron garnet and Ce-modified yttrium iron garnet thin films were grown on (100)-oriented Gd3Ga5O12 substrates by pulsed laser deposition, in order to investigate the role of Bi3+ ions and th... Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells [作者：Zhou, L; McCartney, MR; Smith, DJ; Mouti, A; Feltin, E; Carlin, JF; Grandjean, N,期刊：Applied Physics Letters, 页码：161902-161902 , 文章类型： Article，,卷期：2010年97-16] The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. D... A T-shaped piezoelectric cantilever for fluid energy harvesting [作者：Kwon, SD,期刊：Applied Physics Letters, 页码：164102-164102 , 文章类型： Article，,卷期：2010年97-16] This paper proposes a T-shaped piezoelectric cantilever for generating electric power from fluid flow. The working principle of the device is based on aeroelastic flutter and utilizes a bimorph cantilever with T-shape wh... Acoustic field enhancement and subwavelength imaging by coupling to slab waveguide modes [作者：Christensen, J; de Abajo, FJG,期刊：Applied Physics Letters, 页码：164103-164103 , 文章类型： Article，,卷期：2010年97-16] We present a theoretical study on the amplification of evanescent sound waves produced by coupling to trapped modes hosted by a fluidic planar waveguide. Total internal reflection at interfaces of different refractive in... Tunable elastic stiffness with microconfined magnetorheological domains at low magnetic field [作者：Majidi, C; Wood, RJ,期刊：Applied Physics Letters, 页码：164104-164104 , 文章类型： Article，,卷期：2010年97-16] Surface micropatterning enhances the interfacial sliding resistance of magnetorheological fluid at low magnetic field (10-35 mT). Fluid is confined to surface microchannels, resulting in the formation of spatially aligne... Comment on "Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence" [Appl. Phys. Lett. 89, 161905, (2006)] [作者：Yakimov, EB,期刊：Applied Physics Letters, 页码：166101-166101 , 文章类型： Editorial Material，,卷期：2010年97-16] Response to "Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence'" [Appl. Phys. Lett. 97, 166101, (2010)] [作者：Pauc, N; Phillips, MR; Aimez, V; Drouin, D,期刊：Applied Physics Letters, 页码：166102-166102 , 文章类型： Editorial Material，,卷期：2010年97-16] Recombination effects during expansion into vacuum in laser produced Sn plasma (vol 97, 041502, 2010) [作者：Burdt, RA; Ueno, Y; Tao, YZ; Yuspeh, S; Tillack, MS; Najmabadi, F,期刊：Applied Physics Letters, 页码：169901-169901 , 文章类型： Correction，,卷期：2010年97-16] The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces [作者：Demkowicz, MJ; Bhattacharyya, D; Usov, I; Wang, YQ; Nastasi, M; Misra, A,期刊：Applied Physics Letters, 页码：161903-161903 , 文章类型： Article，,卷期：2010年97-16] Atomistic modeling shows that Cu-Nb and Cu-V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of similar to 5 at. % and similar to 0.8 at. %., respectively. This finding is suppor... Contactless transport of acoustically levitated particles [作者：Bjelobrk, N; Foresti, D; Dorrestijn, M; Nabavi, M; Poulikakos, D,期刊：Applied Physics Letters, 页码：161904-161904 , 文章类型： Article，,卷期：2010年97-16] We present herein a method for the acoustic translation of solid particles of waterlike density in air, by employing a single transducer and controlling the pressure field through regulation of the distance between the r... Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111) [作者：Ouerghi, A; Belkhou, R; Marangolo, M; Silly, MG; El Moussaoui, S; Eddrief, M; Largeau, L; Portail, M; Sirotti, F,期刊：Applied Physics Letters, 页码：161905-161905 , 文章类型： Article，,卷期：2010年97-16] Graphene has emerged as a promising nanoelectronic material in electronic devices applications and studying two-dimensional electron gases with relativistic dispersion near Dirac point. Nonetheless, the control of the pr... Non-melting super-resolution near-field apertures in Sb-Te alloys [作者：Simpson, RE; Fons, P; Wang, X; Kolobov, AV; Fukaya, T; Tominaga, J,期刊：Applied Physics Letters, 页码：161906-161906 , 文章类型： Article，,卷期：2010年97-16] The super-resolution near-field structure permits the formation of short-lived subdiffraction limit apertures that channel electromagnetic energy at the aperture boundary. This effect is commonly observed when a laser is... Interface chemistry and electronic structure of GaN/MgAl2O4 revealed by angle-resolved photoemission spectroscopy [作者：He, G; Chikyow, T; Chichibu, SF,期刊：Applied Physics Letters, 页码：161907-161907 , 文章类型： Article，,卷期：2010年97-16] By modifying the MgAl2O4 substrate surface using chemical etching and thermal passivation, high-quality GaN films have been achieved on the MgAl2O4(111) substrate via metalorganic chemical vapor deposition. The interface...