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The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces

  作者 Demkowicz, MJ; Bhattacharyya, D; Usov, I; Wang, YQ; Nastasi, M; Misra, A  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-16;  页码  161903-161903  
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[摘要]Atomistic modeling shows that Cu-Nb and Cu-V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of similar to 5 at. % and similar to 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu-Nb interfaces than in Cu-V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3502594]

 
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