【文章名】Response to "Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence'" [Appl. Phys. Lett. 97, 166101, (2010)]
Response to "Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence'" [Appl. Phys. Lett. 97, 166101, (2010)]