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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共99条记录   Effect of substrate piezoelectricity on surface acoustic wave propagation in humidity-sensitive structures with porphyrin layers [作者：Ciplys, D; Rimeika, R; Sereika, A; Poderys, V; Rotomskis, R; Shur, MS,期刊：Applied Physics Letters, 页码：171903-171903 , 文章类型： Article，,卷期：2009年95-17] The impact of air humidity on surface acoustic wave (SAW) propagation in different piezoelectric substrates (lithium niobate, lithium tantalate, and gallium nitride on sapphire) with nanostructured meso-tetra (4 sulfonat... Design and characterization of bubble phononic crystals [作者：Leroy, V; Bretagne, A; Fink, M; Willaime, H; Tabeling, P; Tourin, A,期刊：Applied Physics Letters, 页码：171904-171904 , 文章类型： Article，,卷期：2009年95-17] We report the practical realization of phononic crystals with gas inclusions, using soft lithography techniques. Ultrasonic experiments from 0.3 to 5 MHz confirm the existence of deep and wide minima of transmission thro... An oxide thermal rectifier [作者：Kobayashi, W; Teraoka, Y; Terasaki, I,期刊：Applied Physics Letters, 页码：171905-171905 , 文章类型： Article，,卷期：2009年95-17] We have experimentally demonstrated thermal rectification as bulk effect. According to a theoretical design of a thermal rectifier, we have prepared an oxide thermal rectifier made of two cobalt oxides with different the... Shape memory and superelasticity in polycrystalline Cu-Al-Ni microwires [作者：Chen, Y; Zhang, XX; Dunand, DC; Schuh, CA,期刊：Applied Physics Letters, 页码：171906-171906 , 文章类型： Article，,卷期：2009年95-17] We report a strategy to significantly improve the ductility and achieve large superelastic and shape memory strains in polycrystalline Cu-Al-Ni shape memory alloys that are normally brittle. We use a liquid-phase (Taylor... Short range ordering in Fe-Ge and Fe-Ga single crystals [作者：Huang, ML; Lograsso, TA,期刊：Applied Physics Letters, 页码：171907-171907 , 文章类型： Article，,卷期：2009年95-17] We report on the nature of short range ordering (SRO) in slow cooled (100) and (111) Fe81.6Ga18.4 and Fe81Ge9 single crystals determined by x-ray theta-2 theta scans. The SRO of the Ga atoms has at least some D0(3) chara... Mg doping and its effect on the semipolar GaN(11(2)over-bar2) growth kinetics [作者：Lahourcade, L; Pernot, J; Wirthmuller, A; Chauvat, MP; Ruterana, P; Laufer, A; Eickhoff, M; Monroy, E,期刊：Applied Physics Letters, 页码：171908-171908 , 文章类型： Article，,卷期：2009年95-17] We report the effect of Mg doping on the growth kinetics of semipolar GaN(11 (2) over bar2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the sel... Mg doping of thermochromic VO2 films enhances the optical transmittance and decreases the metal-insulator transition temperature [作者：Mlyuka, NR; Niklasson, GA; Granqvist, CG,期刊：Applied Physics Letters, 页码：171909-171909 , 文章类型： Article，,卷期：2009年95-17] Thermochromic films of MgxV1-xO2 were made by reactive dc magnetron sputtering onto heated glass. The metal-insulator transition temperature decreased by similar to 3 K/at. %Mg, while the optical transmittance increased ... Mg-based metallic glass/titanium interpenetrating phase composite with high mechanical performance [作者：Sun, Y; Zhang, HF; Wang, AM; Fu, HM; Hu, ZQ; Wen, CE; Hodgson, PD,期刊：Applied Physics Letters, 页码：171910-171910 , 文章类型： Article，,卷期：2009年95-17] We report an Mg-based metallic glass/titanium interpenetrating phase composite in which constituent phases form a homogeneously interconnected network. The porous titanium constrains shear bands propagation thoroughly an... An ultrasmall wavelength-selective channel drop switch using a nanomechanical photonic crystal nanocavity [作者：Kanamori, Y; Takahashi, K; Hane, K,期刊：Applied Physics Letters, 页码：171911-171911 , 文章类型： Article，,卷期：2009年95-17] We propose a nanomechanical channel drop switch by controlling the submicron distance between a nanocavity and photonic crystal (PC) waveguide with an ultrasmall electrostatic comb actuator. Light propagating in the PC w... Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices [作者：Tran, M; Peiro, J; Jaffres, H; George, JM; Mauguin, O; Largeau, L; Lemaitre, A,期刊：Applied Physics Letters, 页码：172101-172101 , 文章类型： Article，,卷期：2009年95-17] We report on experimental evidence of a magnetization-controlled conductance in AlAs/GaAs/AlAs resonant tunneling diodes contacted by a (Ga,Mn)As ferromagnetic electrode. Large shifts of the resonance voltages occur as t... Electrical spin injection into Si(001) through a SiO2 tunnel barrier [作者：Li, CH; Kioseoglou, G; van 't Erve, OMJ; Thompson, PE; Jonker, BT,期刊：Applied Physics Letters, 页码：172102-172102 , 文章类型： Article，,卷期：2009年95-17] We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular ... Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations [作者：Zhou, SQ; Burger, D; Helm, M; Schmidt, H,期刊：Applied Physics Letters, 页码：172103-172103 , 文章类型： Article，,卷期：2009年95-17] Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge: Mn as a FMS is the occurrence of the anom... Ab initio-derived correlations for defect-dopant interactions in electronic materials [作者：Haran, M; Clancy, P,期刊：Applied Physics Letters, 页码：172104-172104 , 文章类型： Article，,卷期：2009年95-17] This letter describes a parameter-free, simulation-free route to predict dopant-defect energetics under given hydrostatic strained silicon lattices using readily available physical constants such as electronegativity and... Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) [作者：Shen, T; Gu, JJ; Xu, M; Wu, YQ; Bolen, ML; Capano, MA; Engel, LW; Ye, PD,期刊：Applied Physics Letters, 页码：172105-172105 , 文章类型： Article，,卷期：2009年95-17] Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully... In situ probing of electromechanical properties of an individual ZnO nanobelt [作者：Asthana, A; Momeni, K; Prasad, A; Yap, YK; Yassar, RS,期刊：Applied Physics Letters, 页码：172106-172106 , 文章类型： Article，,卷期：2009年95-17] We report here, an investigation on electrical and structural-microstructural properties of an individual ZnO nanobelt via in situ transmission electron microscopy using an atomic force microscopy (AFM) system. The I-V c... Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching [作者：Wang, L; Kim, DH; Adesida, I,期刊：Applied Physics Letters, 页码：172107-172107 , 文章类型： Article，,卷期：2009年95-17] The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic contact performances of...