个性化文献订阅>期刊> Applied Physics Letters
 

Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices

  作者 Tran, M; Peiro, J; Jaffres, H; George, JM; Mauguin, O; Largeau, L; Lemaitre, A  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-17;  页码  172101-172101  
  关联知识点  
 

[摘要]We report on experimental evidence of a magnetization-controlled conductance in AlAs/GaAs/AlAs resonant tunneling diodes contacted by a (Ga,Mn)As ferromagnetic electrode. Large shifts of the resonance voltages occur as the magnetization is rotated from in

 
      被申请数(0)  
 

[全文传递流程]

一般上传文献全文的时限在1个工作日内