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Mg doping and its effect on the semipolar GaN(11(2)over-bar2) growth kinetics

  作者 Lahourcade, L; Pernot, J; Wirthmuller, A; Chauvat, MP; Ruterana, P; Laufer, A; Eickhoff, M; Monroy, E  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-17;  页码  171908-171908  
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[摘要]We report the effect of Mg doping on the growth kinetics of semipolar GaN(11 (2) over bar2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used a

 
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