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  • Nonvolatile resistive switching in graphene oxide thin films
    [作者:He, CL; Zhuge, F; Zhou, XF; Li, M; Zhou, GC; Liu, YW; Wang, JZ; Chen, B; Su, WJ; Liu, ZP; Wu, YH; Cui, P; Li, RW,期刊:Applied Physics Letters, 页码:232101-232101 , 文章类型: Article,,卷期:2009年95-23]
  • Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention tim...