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Nonvolatile resistive switching in graphene oxide thin films

作者	He, CL; Zhuge, F; Zhou, XF; Li, M; Zhou, GC; Liu, YW; Wang, JZ; Chen, B; Su, WJ; Liu, ZP; Wu, YH; Cui, P; Li, RW

选自	期刊 Applied Physics Letters; 卷期 2009年95-23; 页码 232101-232101

关联知识点

[摘要]：Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 10(4) s, and switchi
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