- Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth
[作者:Chen, R; Phann, S; Sun, HD; Zhuang, Q; Godenir, AMR; Krier, A,期刊:Applied Physics Letters, 页码:261905-261905 , 文章类型: Article,,卷期:2009年95-26]
- We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfra...
- The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells
[作者:Kudrawiec, R; Korpijarvi, VM; Poloczek, P; Misiewicz, J; Laukkanen, P; Pakarinen, J; Dumitrescu, M; Guina, M; Pessa, M,期刊:Applied Physics Letters, 页码:261909-261909 , 文章类型: Article,,卷期:2009年95-26]
- The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/II...
- Recombination dynamics of photoluminescence in thiol-protected gold nanoclusters
[作者:Shu, GW; Lin, CC; Chung, HP; Shen, JL; Lin, CAJ; Lee, CH; Chang, WH; Chan, WH; Wang, HH; Yeh, HI; Yuan, CT; Tang, J,期刊:Applied Physics Letters, 页码:261911-261911 , 文章类型: Article,,卷期:2009年95-26]
- Recombination dynamics of photoluminescence (PL) in Au nanoclusters (NCs) with different capping molecules were studied with time-resolved PL. Based on the emission-energy of carrier lifetimes; we suggest that the fast a...
- Investigation of compositional inhomogeneities in complex polycrystalline Cu(In,Ga)Se-2 layers for solar cells
[作者:Fontane, X; Izquierdo-Roca, V; Calvo-Barrio, L; Perez-Rodriguez, A; Morante, JR; Guettler, D; Eicke, A; Tiwari, AN,期刊:Applied Physics Letters, 页码:261912-261912 , 文章类型: Article,,卷期:2009年95-26]
- In-depth resolved composition inhomogeneities of polycrystalline Cu(In,Ga)Se-2 (CIGS) complex layers for high efficiency solar cells were investigated with Raman scattering measurements. In-depth resolved analysis of the...
- Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
[作者:Weingart, S; Bock, C; Kunze, U; Speck, F; Seyller, T; Ley, L,期刊:Applied Physics Letters, 页码:262101-262101 , 文章类型: Article,,卷期:2009年95-26]
- We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R-12,R-43...
- Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation
[作者:Tanaka, T; Sadoh, T; Kurosawa, M; Tanaka, M; Yamaguchi, M; Suzuki, S; Kitamura, T; Miyao, M,期刊:Applied Physics Letters, 页码:262103-262103 , 文章类型: Article,,卷期:2009年95-26]
- Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are i...
- High-field Hall effect and magnetoresistance in Fe3O4 epitaxial thin films up to 30 Tesla
[作者:Fernandez-Pacheco, A; Orna, J; De Teresa, JM; Algarabel, PA; Morellon, L; Pardo, JA; Ibarra, MR; Kampert, E; Zeitler, U,期刊:Applied Physics Letters, 页码:262108-262108 , 文章类型: Article,,卷期:2009年95-26]
- We have measured the Hall effect and the magnetoresistance of epitaxial Fe3O4 thin films grown on MgO (001) in magnetic fields up to 30 T. Using such high fields, it is possible to magnetically saturate films thicker tha...
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