Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant

[摘要]：The surface roughness of In2O3(001) films is a roadblock to potential semiconductor applications of this material. Using plasma-assisted molecular beam epitaxy we found that In2O3(001) films grow rough by the formation of {111} facets and In2O3(111) films

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